Infrared emitting device and method

Kurtz, Steven R; Biefeld, Robert M; Dawson, L Ralph; Howard, Arnold J; Baucom, Kevin C

Title: Infrared emitting device and method

Patent · Wed Jan 01 00:00:00 EST 1997

OSTI ID:870928

Kurtz, Steven R ^[1]; Biefeld, Robert M ^[1]; Dawson, L Ralph ^[1]; Howard, Arnold J ^[1]; Baucom, Kevin C ^[1]

Albuquerque, NM

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

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Research Organization:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation ()

Patent Number(s):: US 5625635

OSTI ID:: 870928

Country of Publication:: United States

Language:: English

References (16)

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy Menna, R. J.; Capewell, D. R.; Martinelli, Ramon U. Applied Physics Letters, Vol. 59, Issue 17 https://doi.org/10.1063/1.106101	journal	October 1991
High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density Choi, H. K.; Eglash, S. J. Applied Physics Letters, Vol. 61, Issue 10 https://doi.org/10.1063/1.107630	journal	September 1992
3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics Choi, H. K.; Turner, G. W.; Liau, Z. L. Applied Physics Letters, Vol. 65, Issue 18 https://doi.org/10.1063/1.112779	journal	October 1994
InAsSb/AlAsSb double‐heterostructure diode lasers emitting at 4 μm Eglash, S. J.; Choi, H. K. Applied Physics Letters, Vol. 64, Issue 7 https://doi.org/10.1063/1.111029	journal	February 1994
Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers Choi, H. K.; Eglash, S. J.; Turner, G. W. Applied Physics Letters, Vol. 64, Issue 19 https://doi.org/10.1063/1.111601	journal	May 1994
The growth of InP1-xSbx by metalorganic chemical vapor deposition Biefeld, R. M.; Baucom, K. C.; Kurtz, S. R. Journal of Crystal Growth, Vol. 133, Issue 1-2 https://doi.org/10.1016/0022-0248(93)90101-2	journal	October 1993
Band structure engineering of semiconductor lasers for optical communications Yablonovitch, E.; Kane, E. O. Journal of Lightwave Technology, Vol. 6, Issue 8 https://doi.org/10.1109/50.4133	journal	August 1988
Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions Kurtz, S. R.; Biefeld, R. M.; Dawson, L. R. Applied Physics Letters, Vol. 64, Issue 7 https://doi.org/10.1063/1.111022	journal	February 1994
InAs _{1− x} Sb _x /In _{1− y} Ga _y As multiple‐quantum‐well heterostructure design for improved 4–5 μm lasers Liau, Z. L.; Choi, H. K. Applied Physics Letters, Vol. 64, Issue 24 https://doi.org/10.1063/1.111341	journal	June 1994
The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition Biefeld, R. M.; Baucom, K. C.; Kurtz, S. R. MRS Proceedings, Vol. 325 https://doi.org/10.1557/PROC-325-493	journal	January 1993
Calculation of Auger rates in a quantum well structure and its application to InGaAsP quantum well lasers Dutta, N. K. Journal of Applied Physics, Vol. 54, Issue 3 https://doi.org/10.1063/1.332185	journal	March 1983
Some characteristics of 3.2 um injection lasers based on InAsSb/InAsSbP system Mani, Habib; Joullie, Andre F. Physical Concepts of Materials for Novel Optoelectronic Device Applications, SPIE Proceedings https://doi.org/10.1117/12.24531	conference	February 1991
InAsSb light emitting diodes and their applications to infra-red gas sensors Dobbelaere, W.; de Boeck, J.; Bruynseraede, C. Electronics Letters, Vol. 29, Issue 10 https://doi.org/10.1049/el:19930594	journal	May 1993
Band-structure engineering for low-threshold high-efficiency semiconductor lasers Adams, A. R. Electronics Letters, Vol. 22, Issue 5 https://doi.org/10.1049/el:19860171	journal	January 1986
Optically pumped laser oscillation at 3.9 μm from Al _0.5 Ga _0.5 Sb/InAs _0.91 Sb _0.09 /Al _0.5 Ga _0.5 Sb double heterostructures grown by molecular beam epitaxy on GaSb van der Ziel, J. P.; Chiu, T. H.; Tsang, W. T. Applied Physics Letters, Vol. 48, Issue 5 https://doi.org/10.1063/1.96537	journal	February 1986
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infrared
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method
comprises
iii-v
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semiconductor
substrate
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quantum-well
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plurality
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formed
ternary
alloy
comprising
inassb
sandwiched
barrier
lattice
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larger
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preferably
compressively
strained
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embodiments
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leds
optically-pumped
laser
electrically-injected
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ternary alloy
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iii-v compound
light emission
quantum-well layer
quantum-well layers
lattice constant
semiconductor laser
alloy comprising
semiconductor substrate
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barrier layer
compound semiconductor
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barrier layers
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semiconductor diode
cladding layer
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layers formed
carrier confinement
energy band
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Title: Infrared emitting device and method

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References (16)

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