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Title: Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers

Abstract

A new class of solid state laser crystals and lasers are formed of transition metal doped sulfide, selenide, and telluride host crystals which have four fold coordinated substitutional sites. The host crystals include II-VI compounds. The host crystal is doped with a transition metal laser ion, e.g., chromium, cobalt or iron. In particular, Cr.sup.2+ -doped ZnS and ZnSe generate laser action near 2.3 .mu.m. Oxide, chloride, fluoride, bromide and iodide crystals with similar structures can also be used. Important aspects of these laser materials are the tetrahedral site symmetry of the host crystal, low excited state absorption losses and high luminescence efficiency, and the d.sup.4 and d.sup.6 electronic configurations of the transition metal ions. The same materials are also useful as saturable absorbers for passive Q-switching applications. The laser materials can be used as gain media in amplifiers and oscillators; these gain media can be incorporated into waveguides and semiconductor lasers.

Inventors:
 [1];  [2];  [3];  [4]
  1. (Pleasanton, CA)
  2. (San Ramon, CA)
  3. (Manteca, CA)
  4. (Castro Valley, CA)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
870540
Patent Number(s):
US 5541948
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
transition-metal; doped; sulfide; selenide; telluride; laser; crystal; lasers; solid; crystals; formed; transition; metal; host; fold; coordinated; substitutional; sites; ii-vi; compounds; chromium; cobalt; iron; particular; -doped; zns; znse; generate; action; near; oxide; chloride; fluoride; bromide; iodide; similar; structures; aspects; materials; tetrahedral; site; symmetry; excited; absorption; losses; luminescence; efficiency; electronic; configurations; useful; saturable; absorbers; passive; q-switching; applications; media; amplifiers; oscillators; incorporated; waveguides; semiconductor; laser action; semiconductor laser; transition metal; laser material; rate laser; semiconductor lasers; host crystals; laser crystals; saturable absorber; metal doped; host crystal; switching applications; doped sulfide; laser crystal; /372/

Citation Formats

Krupke, William F., Page, Ralph H., DeLoach, Laura D., and Payne, Stephen A. Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers. United States: N. p., 1996. Web.
Krupke, William F., Page, Ralph H., DeLoach, Laura D., & Payne, Stephen A. Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers. United States.
Krupke, William F., Page, Ralph H., DeLoach, Laura D., and Payne, Stephen A. Mon . "Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers". United States. https://www.osti.gov/servlets/purl/870540.
@article{osti_870540,
title = {Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers},
author = {Krupke, William F. and Page, Ralph H. and DeLoach, Laura D. and Payne, Stephen A.},
abstractNote = {A new class of solid state laser crystals and lasers are formed of transition metal doped sulfide, selenide, and telluride host crystals which have four fold coordinated substitutional sites. The host crystals include II-VI compounds. The host crystal is doped with a transition metal laser ion, e.g., chromium, cobalt or iron. In particular, Cr.sup.2+ -doped ZnS and ZnSe generate laser action near 2.3 .mu.m. Oxide, chloride, fluoride, bromide and iodide crystals with similar structures can also be used. Important aspects of these laser materials are the tetrahedral site symmetry of the host crystal, low excited state absorption losses and high luminescence efficiency, and the d.sup.4 and d.sup.6 electronic configurations of the transition metal ions. The same materials are also useful as saturable absorbers for passive Q-switching applications. The laser materials can be used as gain media in amplifiers and oscillators; these gain media can be incorporated into waveguides and semiconductor lasers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

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