Method for materials deposition by ablation transfer processing

Patent · 01 January 1996

OSTI ID:870375

Weiner, Kurt H ^[1]

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1. San Jose, CA

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5508065
• OSTI ID: 870375
• Country of Publication: United States
• Language: English

Related Subjects

/427/
ablation
additive
allows
application
area-selective
associated
atmospheric
atmospheric pressure
atmospheric pressures
beam
carried
coated
coated uniformly
cost
costs
covered
deposition
deposition process
deposition processes
depositions
desired
display
due
eliminating
energy
energy source
flat
flat panel
glass
industry
insulating
intensity
layer
low-temperature
material
materials
metallic
metallic material
method
minimized
minimizing
multiple
multiple target
normally
normally require
panel
panel display
parent glass
particular
particular application
patternable
percentage
placed
plastic
pressures
process
processes
processing
pulsed
remains
require
required
resulting
reusing
semiconducting
source
substrate
substrates
systems
target
target substrate
target substrates
temperature
temperatures
transfer
transfer process
transferred
transparent
transparent glass
uniformly
vacuum
vacuum systems
waste