Method for continuous control of composition and doping of pulsed laser deposited films by pressure control
- Knoxville, TN
A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Assignee:
- Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
- Patent Number(s):
- US 5499599
- OSTI ID:
- 870344
- Country of Publication:
- United States
- Language:
- English
Preparation of oriented silicon carbide films by laser ablation of ceramic silicon carbide targets
|
journal | October 1991 |
Deposition of SiC films by pulsed excimer laser ablation
|
journal | October 1990 |
Similar Records
Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films
Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping
Related Subjects
continuous
control
composition
doping
pulsed
laser
deposited
films
pressure
growing
deposit
substrate
semiconductor
material
involves
utilization
deposition
techniques
low-pressure
gas
environment
target
positioned
chamber
atmosphere
developed
heated
irradiated
atoms
ablated
remainder
simultaneously
adsorbed
film
surface
build
form
thin-film
controlling
formed
controlled
continuously
variable
grown
single
fixed
gas environment
low-pressure gas
deposition chamber
pressure gas
semiconductor material
pulsed laser
gas atmosphere
target material
deposition techniques
continuously variable
deposited films
gas atoms
laser deposition
single target
film surface
deposition technique
pressure control
deposited film
thin-film deposit
target mater
adsorbed gas
material involves
laser deposited
continuous control
/117/204/427/438/