Impurity gettering in semiconductors
- Denver, CO
A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.
- Research Organization:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- US 5426061
- OSTI ID:
- 869938
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
gettering
semiconductors
process
semiconductor
substrate
device
silicon
comprises
hydrogenating
sufficient
intensity
time
period
produce
damaged
thereafter
illuminated
electromagnetic
radiation
impurities
diffuse
alloy
metal
form
contact
capture
function
simultaneously
passivate
defects
likewise
diffusing
simultaneous
passivation
substantially
hydrogen-induced
damage
annihilated
taught
alternate
comprising
thermal
treatment
hydrogenation
temperature
500
degree
700
subsequent
alloying
impurity gettering
sufficient intensity
process comprising
period sufficient
semiconductor substrate
electromagnetic radiation
silicon substrate
time period
process comprises
thermal treatment
alloying metal
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