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Multijunction photovoltaic device and method of manufacture

Patent ·
OSTI ID:869812
 [1];  [2];  [3]
  1. Jamison, PA
  2. Boulder, CO
  3. Longhorne, PA
+ Show Author Affiliations
A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.
Assignee:
Amoco Corporation (Naperville, IL) [*] Notice: portion of term of this patent subsequent to September 21, 2010 has been disclaimed.
Patent Number(s):
US 5403404
Application Number:
08/077,769
OSTI ID:
869812
Country of Publication:
United States
Language:
English

References (4)

Stacked solar cells of amorphous silicon journal January 1980
A stable 10% solar cell with a-Si/a-Si double junction structure conference January 1990
Evaluation of Multijunction Structures Using Amorphous Si-Ge Alloys book January 1979
Improving tunneling junction in amorphous silicon tandem solar cells journal May 1990

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