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Title: Substrate for thin silicon solar cells

Patent ·
OSTI ID:869799

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Research Organization:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-83CH10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 5401331
OSTI ID:
869799
Country of Publication:
United States
Language:
English

References (5)

Solar cells from metallurgical silicon zone melted in polycrystalline silicon tubes journal September 1982
Improved High‐Purity Arc‐Furnace Silicon for Solar Cells journal February 1985
Efficient Solar Cells from Metallurgical-Grade Silicon journal January 1980
Silicon by Sodium Reduction of Silicon Tetrafluoride journal January 1981
Progress on the Dow Corning Process for Solar-Grade Silicon book January 1979