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Conversion of fullerenes to diamond

Patent ·
OSTI ID:869635
 [1]
  1. 1324 59th St., Downers Grove, IL 60515
A method of forming synthetic hydrogen defect free diamond or diamond like films on a substrate. The method involves providing vapor containing fullerene molecules with or without an inert gas, providing a device to impart energy to the fullerene molecules, fragmenting at least in part some of the fullerene molecules in the vapor or energizing the molecules to incipient fragmentation, ionizing the fullerene molecules, impinging ionized fullerene molecules on the substrate to assist in causing fullerene fragmentation to obtain a thickness of diamond on the substrate.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL
Assignee:
Gruen, Dieter M. (1324 59th St., Downers Grove, IL 60515)
Patent Number(s):
US 5370855
OSTI ID:
869635
Country of Publication:
United States
Language:
English

References (11)

Laser deposition of carbon clusters on surfaces: A new approach to the study of Fullerenes journal December 1990
High-yield synthesis, separation, and mass-spectrometric characterization of fullerenes C60 to C266 journal September 1991
Delayed electron emission from photoexcited C 60 journal November 1991
Fullerenes journal October 1991
Resilience of all-carbon molecules C60, C70, and C84: a surface-scattering time-of-flight investigation journal October 1991
Metastable Growth of Diamond and Diamond-Like Phases journal August 1991
Triplet states of fullerenes C60 and C70. Electron paramagnetic resonance spectra, photophysics, and electronic structures journal March 1991
Spectrometric Characterization of Purified C 60 and C 70 journal January 1990
C60: Buckminsterfullerene journal September 1991
Growth mechanism of vapor-deposited diamond journal February 1988
Solid C60: a new form of carbon journal September 1990