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Title: CVD method for forming B.sub.i -containing oxide superconducting films

Patent ·
OSTI ID:869203

Films of high T.sub.c Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C.sub.6 H.sub.5).sub.3, deposited on a heated substrate to form a film, and annealed.

Research Organization:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-86ER13511
Assignee:
Northwestern University (Evanston, IL)
Patent Number(s):
5,296,460
Application Number:
07/926,156
OSTI ID:
869203
Resource Relation:
Patent File Date: 1992 Aug 05
Country of Publication:
United States
Language:
English

References (7)

Chemical vapor deposition of YBa 2 Cu 3 O 7 using metalorganic chelate precursors journal October 1988
Growth of superconducting thin films of bismuth-strontium-calcium-copper oxide by organometallic chemical vapor deposition journal October 1988
Organometallic chemical vapor deposition of high T c superconducting films using a volatile, fluorocarbon‐based precursor journal October 1988
Formation of Bismuth Strontium Calcium Copper Oxide Superconducting Films by Chemical Vapor Deposition journal August 1988
Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures journal September 1989
Preparation of Bi-Sr-Ca-Cu-O Superconducting Films by CVD journal May 1989
Organometallic chemical vapor deposition of high T c superconducting Bi‐Sr‐Ca‐Cu‐O films journal March 1989