CVD method for forming B.sub.i -containing oxide superconducting films
Patent
·
OSTI ID:869203
Films of high T.sub.c Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C.sub.6 H.sub.5).sub.3, deposited on a heated substrate to form a film, and annealed.
- Research Organization:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-86ER13511
- Assignee:
- Northwestern University (Evanston, IL)
- Patent Number(s):
- 5,296,460
- Application Number:
- 07/926,156
- OSTI ID:
- 869203
- Resource Relation:
- Patent File Date: 1992 Aug 05
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
cvd
method
forming
-containing
oxide
superconducting
films
bi-sr-ca-cu-o
superconductor
prepared
mocvd
volatile
metal
organic
precursors
water
vapor
volatized
bismuth
source
deposited
heated
substrate
form
film
annealed
metal organic
-sr-ca-cu-o superconductor
superconducting film
oxide superconducting
water vapor
heated substrate
superconducting films
conducting films
organic precursors
organic precursor
conducting film
volatile metal
bi-sr-ca-cu-o superconductor
cvd method
/505/427/
method
forming
-containing
oxide
superconducting
films
bi-sr-ca-cu-o
superconductor
prepared
mocvd
volatile
metal
organic
precursors
water
vapor
volatized
bismuth
source
deposited
heated
substrate
form
film
annealed
metal organic
-sr-ca-cu-o superconductor
superconducting film
oxide superconducting
water vapor
heated substrate
superconducting films
conducting films
organic precursors
organic precursor
conducting film
volatile metal
bi-sr-ca-cu-o superconductor
cvd method
/505/427/