Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Dual control active superconductive devices

Patent ·
OSTI ID:868868
 [1];  [2];  [2];  [2]
  1. Albuquerque, NM
  2. Madison, WI
+ Show Author Affiliations

A superconducting active device has dual control inputs and is constructed such that the output of the device is effectively a linear mix of the two input signals. The device is formed of a film of superconducting material on a substrate and has two main conduction channels, each of which includes a weak link region. A first control line extends adjacent to the weak link region in the first channel and a second control line extends adjacent to the weak link region in the second channel. The current flowing from the first channel flows through an internal control line which is also adjacent to the weak link region of the second channel. The weak link regions comprise small links of superconductor, separated by voids, through which the current flows in each channel. Current passed through the control lines causes magnetic flux vortices which propagate across the weak link regions and control the resistance of these regions. The output of the device taken across the input to the main channels and the output of the second main channel and the internal control line will constitute essentially a linear mix of the two input signals imposed on the two control lines. The device is especially suited to microwave applications since it has very low input capacitance, and is well suited to being formed of high temperature superconducting materials since all of the structures may be formed coplanar with one another on a substrate.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Number(s):
US 5229655
Application Number:
US patent applicaiton 07/816,395
OSTI ID:
868868
Country of Publication:
United States
Language:
English

References (7)

S parameter measurements on single superconducting thin‐film three‐terminal devices made of high‐ T c and low‐ T c materials journal May 1989
Single superconducting thin film devices for applications in high T/sub c/ materials circuits journal March 1989
Fluxon propagation on a parallel array of microbridge‐type Josephson junctions journal March 1988
Optimization of circuit parameters for the vortex flow transistor journal March 1987
Microwave Wide-Band Model of GaAs Dual Gate MESFET's journal January 1982
A superconducting single film device oscillator made of high Tc and low Tc materials conference January 1989
Magnetic Coupling Between Two Adjacent Type-II Superconductors journal November 1965

Similar Records

Dual control active superconductive devices
Patent · 1993 · OSTI ID:6276358
Active superconducting devices formed of thin films
Patent · 1991 · OSTI ID:867840
Active superconducting devices formed of thin films
Patent · 1991 · OSTI ID:5394230

Related Subjects

/327/257/
active
active device
adjacent
applications
capacitance
causes
channel
channels
comprise
conducting material
conduction
conduction channel
constitute
constructed
control
control input
control inputs
control line
coplanar
current
current flow
current flowing
current flows
current pass
current passed
device
devices
dual
dual control
effectively
especially
especially suited
essentially
extends
film
flowing
flows
flux
formed
imposed
input
input signal
input signals
inputs
internal
line
linear
linear mix
lines
link
link region
links
magnetic
magnetic flux
main
main channel
main conduction
material
materials
microwave
microwave applications
mix
output
passed
propagate
region
regions
regions comprise
resistance
separated
signals
structures
substrate
suited
superconducting
superconducting active
superconducting material
superconducting materials
superconductive
superconductor
temperature
temperature superconducting
voids
vortices
weak
weak link