Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Patent · Fri Jan 01 00:00:00 EST 1993

OSTI ID:868839

McKee, Rodney A ^[1]; Walker, Frederick J ^[2]

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1. Kingston, TN
2. Oak Ridge, TN

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-84OR21400
• Assignee: Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
• Patent Number(s): US 5225031
• OSTI ID: 868839
• Country of Publication: United States
• Language: English

Related Subjects

process
depositing
oxide
epitaxially
silicon
substrate
structures
prepared
structure
involving
utilizes
ultra
vacuum
molecular
beam
epitaxy
methods
grow
epitaxial
film
surface
grown
lattice
compound
formed
interface
stabilized
base
layer
comprised
sodium
chloride-type
grows
cover
perovskite
render
product
incorporates
electronic
capabilities
technologically-significant
properties
layer comprised
sodium chloride
silicon substrate
substrate surface
molecular beam
base layer
oxide film
lattice structure
beam epitaxy
compound formed
structures prepared
structure involving
compound form
oxide epitaxially
substrate utilize
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