Process for manufacturing tantalum capacitors

Patent · Fri Jan 01 00:00:00 EST 1993

OSTI ID:868652

Lauf, Robert J ^[1]; Holcombe, Cressie E ^[2]; Dykes, Norman L ^[1]

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1. Oak Ridge, TN
2. Knoxville, TN

A process for manufacturing tantalum capacitors in which microwave energy is used to sinter a tantalum powder compact in order to achieve higher surface area and improved dielectric strength. The process comprises cold pressing tantalum powder with organic binders and lubricants to form a porous compact. After removal of the organics, the tantalum compact is heated to 1300.degree. to 2000.degree. C. by applying microwave radiation. Said compact is then anodized to form a dielectric oxide layer and infiltrated with a conductive material such as MnO.sub.2. Wire leads are then attached to form a capacitor to said capacitor is hermetically packaged to form the finished product.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-84OR21400
• Assignee: Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
• Patent Number(s): US 5184286
• OSTI ID: 868652
• Country of Publication: United States
• Language: English

Related Subjects

process
manufacturing
tantalum
capacitors
microwave
energy
sinter
powder
compact
achieve
surface
improved
dielectric
strength
comprises
cold
pressing
organic
binders
lubricants
form
porous
removal
organics
heated
1300
degree
2000
applying
radiation
anodized
oxide
layer
infiltrated
conductive
material
mno
wire
leads
attached
capacitor
hermetically
packaged
finished
product
powder compact
cold pressing
organic binders
applying microwave
organic binder
microwave radiation
microwave energy
conductive material
oxide layer
process comprises
wave energy
manufacturing tantalum
porous compact
tantalum capacitors
tantalum powder
dielectric strength
tantalum compact
pressing tantalum
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