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Synthesis of actinide nitrides, phosphides, sulfides and oxides

Patent ·
OSTI ID:868379
 [1];  [2];  [2]
  1. Missoula, MT
  2. Los Alamos, NM
+ Show Author Affiliations

A process of preparing an actinide compound of the formula An.sub.x Z.sub.y wherein An is an actinide metal atom selected from the group consisting of thorium, uranium, plutonium, neptunium, and americium, x is selected from the group consisting of one, two or three, Z is a main group element atom selected from the group consisting of nitrogen, phosphorus, oxygen and sulfur and y is selected from the group consisting of one, two, three or four, by admixing an actinide organometallic precursor wherein said actinide is selected from the group consisting of thorium, uranium, plutonium, neptunium, and americium, a suitable solvent and a protic Lewis base selected from the group consisting of ammonia, phosphine, hydrogen sulfide and water, at temperatures and for time sufficient to form an intermediate actinide complex, heating said intermediate actinide complex at temperatures and for time sufficient to form the actinide compound, and a process of depositing a thin film of such an actinide compound, e.g., uranium mononitride, by subliming an actinide organometallic precursor, e.g., a uranium amide precursor, in the presence of an effectgive amount of a protic Lewis base, e.g., ammonia, within a reactor at temperatures and for time sufficient to form a thin film of the actinide compound, are disclosed.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM
DOE Contract Number:
W-7405-ENG-36
Assignee:
United States of America as represented by United States of (Washington, DC)
Patent Number(s):
US 5128112
OSTI ID:
868379
Country of Publication:
United States
Language:
English

References (4)

Tris((hexamethyldisilyl)amido)uranium(III): preparation and coordination chemistry journal June 1979
The ladder structure of [(tert-BuCH2)2TaN]5.cntdot.NH3.cntdot.2C7H8 and its relationship to cubic tantalum nitride journal October 1990
Low Temperature MoCVD Routes to Thin Films from Transition Metal Precursors journal January 1989
Titanium Nitride Thin Films: Properties and Apcvd Synthesis Using Organometallic Precursors journal January 1989

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Related Subjects

/423/501/
actinide
actinide compound
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neptunium
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z