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Title: Method of preparing metallocene compounds

Abstract

This invention describes a novel method of preparing metallocene compounds. The invention is based on synthesis of novel bis cyclopentadienides that, under appropriate conditions, will either encapsulate a transition metal to produce a metallocene such as ferrocene, or ferrocene derivative, or will yield a polymeric metallocene. Compounds produced by this process are useful as catalysts in propulsion systems, or as anti-knock compounds in gasolines.

Inventors:
 [1];  [2]
  1. (Lexington, MA)
  2. (Lisle, IL)
Publication Date:
OSTI Identifier:
868359
Patent Number(s):
US 5124464
Assignee:
Brandeis University (Waltham, MA) OSTI
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; preparing; metallocene; compounds; describes; novel; based; synthesis; bis; cyclopentadienides; appropriate; conditions; encapsulate; transition; metal; produce; ferrocene; derivative; yield; polymeric; produced; process; useful; catalysts; propulsion; systems; anti-knock; gasolines; preparing metal; transition metal; novel method; appropriate conditions; metallocene compounds; compounds produced; propulsion systems; preparing metallocene; /999/528/585/

Citation Formats

Rosenblum, Myron, and Matchett, Stephen A. Method of preparing metallocene compounds. United States: N. p., 1992. Web.
Rosenblum, Myron, & Matchett, Stephen A. Method of preparing metallocene compounds. United States.
Rosenblum, Myron, and Matchett, Stephen A. Wed . "Method of preparing metallocene compounds". United States. doi:. https://www.osti.gov/servlets/purl/868359.
@article{osti_868359,
title = {Method of preparing metallocene compounds},
author = {Rosenblum, Myron and Matchett, Stephen A.},
abstractNote = {This invention describes a novel method of preparing metallocene compounds. The invention is based on synthesis of novel bis cyclopentadienides that, under appropriate conditions, will either encapsulate a transition metal to produce a metallocene such as ferrocene, or ferrocene derivative, or will yield a polymeric metallocene. Compounds produced by this process are useful as catalysts in propulsion systems, or as anti-knock compounds in gasolines.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}

Patent:

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  • This invention describes a novel method of preparing metallocene compounds. The invention is based on synthesis of novel bis cyclopentadienides that, under appropriate conditions, will either encapsulate a transition metal to produce a metallocene such as ferrocene, or ferrocene derivative, or will yield a polymeric metallocene. Compounds produced by this process are useful as catalysts in propulsion systems, or as anti-knock compounds in gasolines. 2 figs.
  • An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds is provided in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid, and hydrogen fluoride, which will rapidly etchmore » the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.« less
  • An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate, and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid and hydrogen fluoride, which will rapidly etch the niobiummore » compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.« less