Group I-III-VI.sub.2 semiconductor films for solar cell application
Patent
·
OSTI ID:867891
- Redondo Beach, CA
- Northridge, CA
This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.
- Assignee:
- International Solar Electric Technology, Inc. (Inglewood, CA)
- Patent Number(s):
- US 5028274
- OSTI ID:
- 867891
- Country of Publication:
- United States
- Language:
- English
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