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U.S. Department of Energy
Office of Scientific and Technical Information

Group I-III-VI.sub.2 semiconductor films for solar cell application

Patent ·
OSTI ID:867891
This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.
Assignee:
International Solar Electric Technology, Inc. (Inglewood, CA)
Patent Number(s):
US 5028274
OSTI ID:
867891
Country of Publication:
United States
Language:
English