Superlattice doped layers for amorphous silicon photovoltaic cells

Patent · Tue Jan 12 00:00:00 EST 1988

OSTI ID:866471

Arya, Rajeewa R ^[1]

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1. Doylestown, PA

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

• DOE Contract Number: ZB4030563
• Assignee: Solarex Corporation (Rockville, MD)
• Patent Number(s): US 4718947
• Application Number: 06/853,032
• OSTI ID: 866471
• Country of Publication: United States
• Language: English

Related Subjects

superlattice
doped
layers
amorphous
silicon
photovoltaic
cells
comprise
plurality
lattices
alternatingly
formed
optical
bandgap
method
fabricating
disclosed
photovoltaic cells
amorphous silicon
photovoltaic cell
doped layer
silicon photovoltaic
doped layers
superlattice doped
cells comprise
optical band
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