Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
Patent
·
OSTI ID:866346
- Patchogue, NY
- Lesmo, IT
A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.
- Research Organization:
- ASSOC UNIVERSITIES INC
- DOE Contract Number:
- AC02-76CH00016
- Assignee:
- United States of America as represented by Department of Energy (Washington, DC)
- Patent Number(s):
- US 4688067
- OSTI ID:
- 866346
- Country of Publication:
- United States
- Language:
- English
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/257/250/
according
action
applying
associated
attainable
bias
bias voltage
capacitance
carrier
chamber
channels
characterized
charge
charge coupled
charge field
circuit
circuit means
collection
combination
combined
combined action
constructed
constructed according
contact
coupled
coupled device
deplete
depleted
detector
detectors
device
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drift
drift chamber
due
effectively
electrode
electrode voltage
fewer
field
field due
including
indicating
junctions
major
major surface
major surfaces
means
method
methods
ohmic
ohmic contact
opposing
particle
position
position indicating
predetermined
principles
prior
providing
readout
realize
rectifying
rectifying junction
rectifying junctions
regions
requiring
resolution
semiconductor
semiconductor charge
semiconductor wafer
semiconductors
significantly
space
space charge
substantially
surfaces
time
transport
transport device
usable
voltage
voltages
wafer
according
action
applying
associated
attainable
bias
bias voltage
capacitance
carrier
chamber
channels
characterized
charge
charge coupled
charge field
circuit
circuit means
collection
combination
combined
combined action
constructed
constructed according
contact
coupled
coupled device
deplete
depleted
detector
detectors
device
devices
drift
drift chamber
due
effectively
electrode
electrode voltage
fewer
field
field due
including
indicating
junctions
major
major surface
major surfaces
means
method
methods
ohmic
ohmic contact
opposing
particle
position
position indicating
predetermined
principles
prior
providing
readout
realize
rectifying
rectifying junction
rectifying junctions
regions
requiring
resolution
semiconductor
semiconductor charge
semiconductor wafer
semiconductors
significantly
space
space charge
substantially
surfaces
time
transport
transport device
usable
voltage
voltages
wafer