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Title: Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

Abstract

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Inventors:
 [1];  [2]
  1. Patchogue, NY
  2. Lesmo, IT
Publication Date:
Research Org.:
Associated Universities, Inc., Upton, NY (United States)
OSTI Identifier:
866346
Patent Number(s):
US 4688067
Assignee:
United States of America as represented by Department of Energy (Washington, DC)
DOE Contract Number:  
AC02-76CH00016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
carrier; transport; collection; depleted; semiconductors; combined; action; space; charge; field; due; electrode; voltages; semiconductor; device; method; characterized; providing; wafer; rectifying; junctions; opposing; major; surfaces; including; capacitance; ohmic; contact; combination; bias; voltage; means; associated; circuit; applying; predetermined; effectively; deplete; regions; usable; drift; chamber; detector; coupled; constructed; according; methods; devices; detectors; principles; significantly; particle; position; indicating; resolution; attainable; prior; time; requiring; substantially; fewer; readout; channels; realize; major surfaces; semiconductor wafer; charge coupled; coupled device; ohmic contact; bias voltage; circuit means; space charge; transport device; major surface; position indicating; rectifying junctions; rectifying junction; semiconductor charge; constructed according; combined action; charge field; field due; electrode voltage; drift chamber; /257/250/

Citation Formats

Rehak, Pavel, and Gatti, Emilio. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages. United States: N. p., 1987. Web.
Rehak, Pavel, & Gatti, Emilio. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages. United States.
Rehak, Pavel, and Gatti, Emilio. Thu . "Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages". United States. https://www.osti.gov/servlets/purl/866346.
@article{osti_866346,
title = {Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages},
author = {Rehak, Pavel and Gatti, Emilio},
abstractNote = {A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.},
doi = {},
url = {https://www.osti.gov/biblio/866346}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}

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