Process for the chemical preparation of high-field ZnO varistors

Patent · Thu Jan 01 00:00:00 EST 1987

OSTI ID:866313

Brooks, Robert A ^[1]; Dosch, Robert G ^[2]; Tuttle, Bruce A ^[2]

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1. Tijeras, NM
2. Albuquerque, NM

Chemical preparation techniques involving co-precipitation of metals are used to provide micro-structural characteristics necessary in order to produce ZnO varistors and their precursors for high field applications. The varistors produced have homogeneous and/or uniform dopant distributions and a submicron average grain size with a narrow size distribution. Precursor powders are prepared via chemical precipitation techniques and varistors made by sintering uniaxially and/or isostatically pressed pellets. Using these methods, varistors were made which were suitable for high-power applications, having values of breakdown field, E.sub.B, in the 10-100 kV/cm range, .alpha.>30 and densities in the range of 65-99% of theoretical, depending on both composition and sintering temperature.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4681717
• OSTI ID: 866313
• Country of Publication: United States
• Language: English

Related Subjects

process
chemical
preparation
high-field
zno
varistors
techniques
involving
co-precipitation
metals
provide
micro-structural
characteristics
produce
precursors
field
applications
produced
homogeneous
uniform
dopant
distributions
submicron
average
grain
size
narrow
distribution
precursor
powders
prepared
via
precipitation
sintering
uniaxially
isostatically
pressed
pellets
methods
suitable
high-power
values
breakdown
10-100
kv
cm
range
alpha
30
densities
65-99
theoretical
depending
composition
temperature
narrow size
average grain
structural characteristics
size distribution
grain size
precursor powder
precursor powders
isostatically pressed
sintering temperature
field applications
chemical preparation
zno varistors
via chemical
power applications
prepared via
/264/252/