Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

Patent · Tue Apr 02 00:00:00 EST 1985

OSTI ID:865390

Moustakas, Theodore D ^[1]; Maruska, H Paul ^[1]

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1. Annandale, NJ

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

• DOE Contract Number: XZ092191
• Assignee: Exxon Research & Engineering Co. (Florham Park, NJ)
• Patent Number(s): US 4508609
• Application Number: 06/535,902
• OSTI ID: 865390
• Country of Publication: United States
• Language: English

Related Subjects

method
sputtering
microcrystalline
amorphous
silicon
semiconductor
device
n-layers
sputtered
boron
phosphorous
heavily
doped
targets
constructed
layers
layer
undoped
target
semi-transparent
ohmic
electrode
heavily doped
amorphous silicon
semiconductor device
semi-transparent ohmic
ohmic electrode
silicon semiconductor
transparent ohmic
/204/136/257/