Photosensitivity enhancement of PLZT ceramics by positive ion implantation

Patent · Sat Jan 01 04:00:00 EST 1983

OSTI ID:864608

Land, Cecil E ^[1]; Peercy, Paul S ^[1]

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1. Albuquerque, NM

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
• DOE Contract Number: AT(29-1)-789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4391901
• OSTI ID: 864608
• Country of Publication: United States
• Language: English

Related Subjects

/430/252/359/365/501/
10
100
12
17
30
38
500
62
70
absorption
absorption characteristics
advantageously
below
ceramic
ceramic mater
ceramic material
ceramics
characteristics
chemically
chemically react
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content
contrast
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density
depth
devices
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exposing
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incandescent
kev
lanthanum
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lead
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light
light source
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lighting
material
method
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microns
mole
near
near-uv
non-volatile
photoferroelectric
photosensitivity
plate
plzt
plzt ceramics
positive
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ranging
reactive
resolution
result
sensitive
serves
shift
significantly
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storage
sufficient
sufficient density
sufficient energy
sunlight
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zirconate
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