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Title: Photosensitivity enhancement of PLZT ceramics by positive ion implantation

Abstract

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

Inventors:
 [1];  [1]
  1. (Albuquerque, NM)
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
OSTI Identifier:
864608
Patent Number(s):
US 4391901
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:  
AT(29-1)-789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
photosensitivity; enhancement; plzt; ceramics; positive; implantation; lead; lanthanum; zirconate; titanate; ceramic; material; resolution; contrast; non-volatile; photoferroelectric; image; storage; display; devices; enhanced; significantly; near; surface; implanted; chemically; reactive; advantageously; serves; shift; absorption; characteristics; near-uv; light; visible; result; plate; sensitive; sunlight; conventional; lighting; fluorescent; incandescent; sources; method; disclosed; exposing; sufficient; density; times; 10; 12; 17; energy; 100; 500; kev; provide; content; ranging; 62; 70; mole; 38; 30; depth; microns; below; absorption characteristics; chemically react; sufficient density; zirconate titanate; sufficient energy; ceramic material; light source; visible light; light sources; method disclosed; display device; chemically reactive; lanthanum zirconate; lead lanthanum; lead zirconate; ceramic mater; plzt ceramics; /430/252/359/365/501/

Citation Formats

Land, Cecil E., and Peercy, Paul S. Photosensitivity enhancement of PLZT ceramics by positive ion implantation. United States: N. p., 1983. Web.
Land, Cecil E., & Peercy, Paul S. Photosensitivity enhancement of PLZT ceramics by positive ion implantation. United States.
Land, Cecil E., and Peercy, Paul S. Sat . "Photosensitivity enhancement of PLZT ceramics by positive ion implantation". United States. https://www.osti.gov/servlets/purl/864608.
@article{osti_864608,
title = {Photosensitivity enhancement of PLZT ceramics by positive ion implantation},
author = {Land, Cecil E. and Peercy, Paul S.},
abstractNote = {The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {1}
}

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