Nondestructive method for detecting defects in photodetector and solar cell devices

Patent · Thu Jan 01 00:00:00 EST 1981

OSTI ID:863976

Sawyer, David E ^[1]

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1. Rockville, MD

The invention described herein is a method for locating semiconductor device defects and for measuring the internal resistance of such devices by making use of the intrinsic distributed resistance nature of the devices. The method provides for forward-biasing a solar cell or other device while it is scanning with an optical spot. The forward-biasing is achieved with either an illuminator light source or an external current source.

• DOE Contract Number: EA77A016010
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4287473
• OSTI ID: 863976
• Country of Publication: United States
• Language: English

Related Subjects

nondestructive
method
detecting
defects
photodetector
solar
cell
devices
described
locating
semiconductor
device
measuring
internal
resistance
intrinsic
distributed
nature
provides
forward-biasing
scanning
optical
spot
achieved
illuminator
light
source
external
current
cell device
nondestructive method
light source
solar cell
semiconductor device
current source
method provides
method provide
cell devices
detecting defects
external current
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