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Title: Multiple gap photovoltaic device

Patent ·
OSTI ID:863824

A multiple gap photovoltaic device having a transparent electrical contact adjacent a first cell which in turn is adjacent a second cell on an opaque electrical contact, includes utilizing an amorphous semiconductor as the first cell and a crystalline semiconductor as the second cell.

Research Organization:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-79ET23034
Assignee:
University of Delaware (Newark, DE)
Patent Number(s):
4,253,882
Application Number:
06/121802
OSTI ID:
863824
Resource Relation:
Patent File Date: 1980 Feb 15
Country of Publication:
United States
Language:
English

References (4)

Heterojunctions of Amorphous Silicon and Silicon Single Crystals conference January 1974
The electrical and photovoltaic properties of heterojunctions between an amorphous Ge-Te-Se film and crystalline silicon journal February 1979
A new type of amorphous silicon photovoltaic cell generating more than 2.0 V journal July 1979
Evaluation of Multijunction Structures Using Amorphous Si-Ge Alloys book January 1979

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Related Subjects

multiple
gap
photovoltaic
device
transparent
electrical
contact
adjacent
cell
opaque
utilizing
amorphous
semiconductor
crystalline
transparent electrical
electrical contact
photovoltaic device
crystalline semiconductor
amorphous semiconductor
opaque electrical
multiple gap
gap photovoltaic
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