Method for making defect-free zone by laser-annealing of doped silicon
- Knoxville, TN
- Oak Ridge, TN
This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4181538
- OSTI ID:
- 863479
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
defect-free
zone
laser-annealing
doped
silicon
improving
electrical
properties
semiconductor
material
comprises
irradiating
selected
surface
layer
high-power
laser
pulses
characterized
special
combination
wavelength
energy
level
duration
effects
melting
degrading
minority-carrier
diffusion
length
applicable
n-
p-type
form
junction
therein
application
virtually
complete
removal
doping-induced
defects
ion-implanted
diffusion-doped
substrates
selected surface
high-power laser
carrier diffusion
silicon substrates
diffusion length
energy level
laser pulses
method comprises
laser pulse
semiconductor material
silicon substrate
surface layer
electrical properties
power laser
doped silicon
method comprise
complete removal
silicon semiconductor
comprises irradiating
virtually complete
electrical junction
junction therein
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