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Title: Amorphous silicon solar cell allowing infrared transmission

Abstract

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Inventors:
 [1]
  1. (Yardley, PA)
Publication Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
863415
Patent Number(s):
US 4166919
Assignee:
RCA Corporation (New York, NY) OSTI
DOE Contract Number:  
EY-76-C-03-1286
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
amorphous; silicon; solar; cell; allowing; infrared; transmission; layer; index; refraction; material; series; layers; indices; deposited; transparent; substrate; reflect; light; energies; bandgap; energy; transmit; radiation; reflect light; transparent substrate; gap energy; material deposited; amorphous silicon; solar cell; solar radiation; silicon solar; bandgap energy; refraction material; parent substrate; /136/148/

Citation Formats

Carlson, David E. Amorphous silicon solar cell allowing infrared transmission. United States: N. p., 1979. Web.
Carlson, David E. Amorphous silicon solar cell allowing infrared transmission. United States.
Carlson, David E. Mon . "Amorphous silicon solar cell allowing infrared transmission". United States. https://www.osti.gov/servlets/purl/863415.
@article{osti_863415,
title = {Amorphous silicon solar cell allowing infrared transmission},
author = {Carlson, David E.},
abstractNote = {An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}

Patent:

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