Method for fabricating beryllium structures

Patent · Sat Jan 01 00:00:00 EST 1977

OSTI ID:862776

Hovis, Jr., Victor M. ^[1]; Northcutt, Jr., Walter G. ^[2]

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1. (Kingston, TN)
2. (Oak Ridge, TN)

Thin-walled beryllium structures are prepared by plasma spraying a mixture of beryllium powder and about 2500 to 4000 ppm silicon powder onto a suitable substrate, removing the plasma-sprayed body from the substrate and placing it in a sizing die having a coefficient of thermal expansion similar to that of the beryllium, exposing the plasma-sprayed body to a moist atmosphere, outgassing the plasma-sprayed body, and then sintering the plasma-sprayed body in an inert atmosphere to form a dense, low-porosity beryllium structure of the desired thin-wall configuration. The addition of the silicon and the exposure of the plasma-sprayed body to the moist atmosphere greatly facilitate the preparation of the beryllium structure while minimizing the heretofore deleterious problems due to grain growth and grain orientation.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: W-7405-ENG-26
• Assignee: United States of America as represented by United States Energy (Washington, DC)
• Patent Number(s): US 4011076
• OSTI ID: 862776
• Country of Publication: United States
• Language: English

Related Subjects

method
fabricating
beryllium
structures
thin-walled
prepared
plasma
spraying
mixture
powder
2500
4000
ppm
silicon
suitable
substrate
removing
plasma-sprayed
placing
sizing
die
coefficient
thermal
expansion
similar
exposing
moist
atmosphere
outgassing
sintering
inert
form
dense
low-porosity
structure
desired
thin-wall
configuration
addition
exposure
greatly
facilitate
preparation
minimizing
heretofore
deleterious
due
grain
growth
orientation
silicon powder
plasma spray
thermal expansion
inert atmosphere
plasma spraying
suitable substrate
grain growth
grain orientation
expansion similar
beryllium structure
beryllium structures
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