SiC-Al interface crystallographic orientation relationship in a squeeze-cast SiCw/Al composite

Journal Article · Thu Jun 01 04:00:00 EDT 1995 · Materials Characterization

DOI:https://doi.org/10.1016/1044-5803(95)80077-8· OSTI ID:85930

Geng, L; Wu, K; Yao, G K ^[1]

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1. Harbin Inst. of Technology (China). Dept. of Metals and Technology

A SiC-Al interface in a squeeze-cast SiCw/6061 Al composite was studied by means of scanning transmission electron microscopy and high-resolution electron microscopy. A crystallographic orientation relationship was found at the SiC-Al interface and was identified as (01{bar 1}){sub SiC}//(001){sub Al}, [211]{sub SiC}//[100]{sub Al}. Based on crystallography theory, the formation mechanism of the orientation relationship was analyzed in detail. A semicoherent atom matching model of the SiC-Al interface was developed that can explain why the squeeze-cast SiCw/6061 Al composite has a high interface bond strength.

• OSTI ID: 85930
• Journal Information: Materials Characterization, Journal Name: Materials Characterization Journal Issue: 4 Vol. 34; ISSN 1044-5803; ISSN MACHEX
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM BASE ALLOYS
COMPOSITE MATERIALS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
INTERFACES
MATHEMATICAL MODELS
ORIENTATION
SCANNING ELECTRON MICROSCOPY
SILICON CARBIDES
TRANSMISSION ELECTRON MICROSCOPY