Micron-gap ThermoPhotoVoltaics (MTPV)
This paper discusses advances made in the field of Micron-gap ThermoPhotoVoltaics (MTPV). Initial modeling has shown that MTPV may enable significant performance improvements relative to conventional far field TPV. These performance improvements include up to a 10x increase in power density, 30% to 35% fractional increase in conversion efficiency, or alternatively, reduced radiator temperature requirements to as low as 550 C. Recent experimental efforts aimed at supporting these predictions have successfully demonstrated that early current and voltage enhancements could be done repeatedly and at higher temperatures. More importantly, these efforts indicated that no unknown energy transfer process occurs reducing the potential utility of MTPV. Progress has been made by running tests with at least one of the following characteristics relative to the MTPV results reported in 2001: Tests at over twice the temperature (900 C); Tests at 50% smaller gaps (0.12 {micro}m); Tests with emitter areas from 4 to 100 times larger (16 mm{sup 2} to 4 cm{sup 2}); and Tests with over 20x reduction in parasitic spacer heat flow. Remaining fundamental challenges to realizing these improvements relative to the recent breakthroughs in conventional far field TPV include reengineering the photovoltaic (PV) diode, filter, and emitter system for MTPV and engineering devices and systems that can achieve submicron vacuum gaps between surfaces with large temperature differences.
- Research Organization:
- KAPL (Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- DE-AC12-00SN39357
- OSTI ID:
- 850131
- Report Number(s):
- LM-04K064; TRN: US200518%%173
- Country of Publication:
- United States
- Language:
- English
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