Dopant and self-diffusion in extrinsic n-type silicon isotopically controlled heterostructures
- LBNL Library
We present experimental results of dopant- and self-diffusion in extrinsic silicon doped with As. Multilayers of isotopically controlled {sup 28}Si and natural silicon enable simultaneous analysis of {sup 30}Si diffusion into the {sup 28}Si enriched layers and dopant diffusion throughout the multilayer structure. In order to suppress transient enhanced self- and dopant diffusion caused by ion implantation, we adopted a special approach to dopant introduction. First, an amorphous 250-nm thick Si layer was deposited on top of the Si isotope heterostructure. Then the dopant ions were implanted to a depth such that all the radiation damage resided inside this amorphous cap layer. These samples were annealed for various times and temperatures to study the impact of As diffusion and doping on Si self-diffusion. The Si self-diffusion coefficient and the dopant diffusivity for various extrinsic n-type conditions were determined over a wide temperature range. We observed increased diffusivities that we attribute to the increase in the concentration of the native defect promoting the diffusion.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic Energy Sciences.Materials Sciences and Engineering Division; National Science Foundation Grant DMR-0109844; State of California.UC-Smart Program SM97-01 (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 840971
- Report Number(s):
- LBNL--50013
- Country of Publication:
- United States
- Language:
- English
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