Ion back-bombardment of GaAs photocathodes inside dc high voltage electron guns
DC high voltage GaAs photoguns are key components at accelerator facilities worldwide. New experiments and new accelerator facilities demand improved performance from these guns, in particular higher current operation and longer photocathode operating lifetime. This conference submission explores bulk GaAs photocathode lifetime as a function of beam current, active photocathode area, laser spot size and the vacuum of the gun and beam line. Lifetime measurements were made at 100 microamps, a beam current relevant for accelerators like CEBAF, and at beam currents of 1 milliamps and 5 milliamps, a regime that is interesting for high current Free Electron Laser (FEL) and Energy Recovery Linac (ERL) operation.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC05-84ER40150
- OSTI ID:
- 840492
- Report Number(s):
- JLAB-ACO-05-370; DOE/ER/40150-3422; TRN: US0502051
- Resource Relation:
- Conference: PAC 05, Knoxville, TN (US), 05/16/2005--05/20/2005; Other Information: PBD: 1 May 2005
- Country of Publication:
- United States
- Language:
- English
Similar Records
Charge Lifetime Study of K2CsSb Photocathode Inside a Jlab DC High Voltage Gun
A high average current DC GaAs photocathode gun for ERLs and FELs