Highly-Polarized Electron Emission from Strain-Compensated AlInGaAs-GaAsP Superlattices
- SLAC
New results from experimental and theoretical studies of spin-polarized electron emission from InAlGaAs-GaAsP superlattice photocathodes with opposite strain in the quantum well and barrier layers are presented. The measured values of maximum polarization and quantum yield for the structure with a 0.18 {micro}m-thick working layer are close to the best results reported for strained superlattice photocathode structures, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.
- Research Organization:
- Stanford Linear Accelerator Center (SLAC), Menlo Park, CA
- Sponsoring Organization:
- SC
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 839712
- Report Number(s):
- SLAC-PUB-10895
- Country of Publication:
- United States
- Language:
- English
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