Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiC
- Materials Science Division, Lawrence Berkeley Laboratory 62/203, Berkeley, California 94720 (United States)
- Department of Materials Science and Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
Transmission electron microscopy was used for the characterization of GaN epitaxial layers grown by molecular-beam epitaxy on two different substrates: sapphire (Al{sub 2}O{sub 3}) and 6{ital H}-SiC. GaN layers grown on both substrates crystallize with the wurtzite structure. Despite the very different lattice mismatch associated with their two substrates, similar types of defects were formed in the GaN layer; only their density differed. In addition to small-angle subgrain boundaries two other types of defects were seen in cross-sectioned samples: defects parallel to the growth surface and microtwins with a width of about 8--10 nm perpendicular to the growth surface. The parallel defects were identified as stacking faults leading to a local fcc atom arrangement in the layer and are believed to be growth defects. The density of these faults decreased with layer thickness. However, the density of the vertical microtwins remained constant through the layer. Slight local lattice twists between the microtwins and surrounding areas or differences of stoichiometry are suggested as an explanation for the observed contrast of the high-resolution images. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 83916
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 13; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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