Voltage shifts and imprint in ferroelectric capacitors

Journal Article · Mon Aug 07 04:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.115531· OSTI ID:83902

Warren, W L; Dimos, D; Pike, G E; Tuttle, B A; Raymond, M V ^[1]; Ramesh, R ^[2]; Evans, Jr, J T ^[3]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1349 (United States)
2. Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)
3. Radiant Technologies Inc., Albuquerque, New Mexico 87106 (United States)

Voltage offsets in the polarization-voltage characteristics of Pb(Zr,Ti)O{sub 3} capacitors can be induced by either thermal or optical processes. The thermally (optically) induced voltage shift occurs by heating (illuminating) the sample under remanence or a saturating bias. Generally speaking, the thermally induced voltage shifts are greater than those obtained optically; this is attributed to the role of oxygen vacancy-related defect dipoles throughout the film. We find that the inclusion of a dopant element that occupies a portion of the Ti(Zr) sites and has an oxidation state greater than +4 reduces the thermally induced voltage shifts observed in the capacitors. This may result because these particular dopants reduce the oxygen vacancy density and, hence, the defect-dipole contribution to the voltage shift. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 83902
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 67; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITORS
DEFECTS
HEAT TREATMENTS
MEMORY DEVICES
POLARIZATION
PZT
THERMAL DEGRADATION
VACANCIES