Voltage shifts and imprint in ferroelectric capacitors
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1349 (United States)
- Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)
- Radiant Technologies Inc., Albuquerque, New Mexico 87106 (United States)
Voltage offsets in the polarization-voltage characteristics of Pb(Zr,Ti)O{sub 3} capacitors can be induced by either thermal or optical processes. The thermally (optically) induced voltage shift occurs by heating (illuminating) the sample under remanence or a saturating bias. Generally speaking, the thermally induced voltage shifts are greater than those obtained optically; this is attributed to the role of oxygen vacancy-related defect dipoles throughout the film. We find that the inclusion of a dopant element that occupies a portion of the Ti(Zr) sites and has an oxidation state greater than +4 reduces the thermally induced voltage shifts observed in the capacitors. This may result because these particular dopants reduce the oxygen vacancy density and, hence, the defect-dipole contribution to the voltage shift. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 83902
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 67; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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