Fatigue of polycrystalline silicon for MEMS applications: Crack growth and stability under resonant loading conditions

Journal Article · Tue Dec 04 23:00:00 EST 2001 · Mechanics of Materials

OSTI ID:837916

Muhlstein, C L ^[1]; Howe, R T; Ritchie, R O

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1. LBNL Library

Although bulk silicon is not known to exhibit susceptibility to cyclic fatigue, micron-scale structures made from silicon films are known to be vulnerable to degradation by fatigue in ambient air environments, a phenomenon that has been recently modeled in terms of a mechanism of sequential oxidation and stress-corrosion cracking of the native oxide layer.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Science. Office of Basic Energy Sciences. Division of Materials Sciences (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 837916
• Report Number(s): LBNL--49308
• Journal Information: Mechanics of Materials, Journal Name: Mechanics of Materials Journal Issue: 1-2 Vol. 36
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRACK PROPAGATION
FATIGUE MEMS RESONANCE POLYCRYSTALLINE SILICON CRACK STABILITY
OXIDATION
OXIDES
SILICON
STABILITY
STRESS CORROSION