Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs
Journal Article
·
· IEEE Transaction on Nuclear Science
Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800 x 1100, 15 mu m pixel, 280 mu m thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of High Energy and Nuclear Physics. Division of High Energy Physics (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 836977
- Report Number(s):
- LBNL-55685; R&D Project: PS1521; TRN: US200504%%428
- Journal Information:
- IEEE Transaction on Nuclear Science, Vol. 51, Issue 5; Other Information: Submitted to IEEE Transaction on Nuclear Science: Volume 51, No.5; Journal Publication Date: Oct 2004; PBD: 30 Jun 2004
- Country of Publication:
- United States
- Language:
- English
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