Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs

Journal Article · Wed Jun 30 00:00:00 EDT 2004 · IEEE Transaction on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2004.834721· OSTI ID:836977

Karcher, Armin ^[1]; Bebek, Christopher J; Kolbe, William F; Maurath, Dominic; Prasad, Valmiki; Uslenghi, Michela; Wagner, Martin

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1. LBNL Library

Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800 x 1100, 15 mu m pixel, 280 mu m thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director. Office of Science. Office of High Energy and Nuclear Physics. Division of High Energy Physics (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 836977
• Report Number(s): LBNL--55685
• Journal Information: IEEE Transaction on Nuclear Science, Journal Name: IEEE Transaction on Nuclear Science Journal Issue: 5 Vol. 51
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
CCD DIFFUSION FULLY-DEPLETED
DIFFUSION
SPATIAL RESOLUTION
SUBSTRATES
WAVELENGTHS