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Suppression of the surface charge limit in strained GaAs photocathodes

Journal Article · · AIP Conference Proceedings
OSTI ID:831414
 [1]
  1. SLAC
+ Show Author Affiliations
No abstract prepared.
Research Organization:
Stanford Linear Accelerator Center, Menlo Park, CA (US)
Sponsoring Organization:
USDOE Office of Science (US)
DOE Contract Number:
AC03-76SF00515
OSTI ID:
831414
Report Number(s):
SLAC-REPRINT-2002-365
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Vol. 675
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
LIMITING VALUES
PHOTOCATHODES
SURFACE POTENTIAL