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U.S. Department of Energy
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In-situ formation and characterization of {alpha}-Si{sub 3}N{sub 4} whiskers from nano amorphous Si-N-C powders

Conference ·
OSTI ID:82578
; ;  [1]
  1. National Key Lab of RSA, Shenyang (China)
{alpha}-Si{sub 3}N{sub 4} whiskers were formed from laser-synthesized nanoscale amorphous Si-N-C powders at 1,873 K under 1 atm N{sub 2}. The as-formed whiskers were characterized by TEM, STEM, XRD techniques and the process conditions for the whisker growth were studied. The whiskers exhibit various morphologies such as the long thick straight, the prismatic, the ribbon-like, and knuckled whiskers. The gas phase reaction among N{sub 2}, SiO, and CO gases leads to Si{sub 3}N{sub 4} whisker growth on the pre-crystallized {alpha}-Si{sub 3}N{sub 4} grains by the Vapor-Solid (VS) mechanism along specific crystal planes such as {l_brace}1101{r_brace}*, which ensures an in-situ formation. No addition of other catalyst and the atomic combination of the elements in the Si-N-C powders ensure a high purity of the whiskers.
OSTI ID:
82578
Report Number(s):
CONF-941144--; ISBN 1-55899-264-2
Country of Publication:
United States
Language:
English