Final Project Report for Grant DE-FG03-00ER54581 Selective Control of Chemical Reactions With Plasmas

Technical Report · Wed Jan 28 00:00:00 EST 2004

DOI:https://doi.org/10.2172/820945· OSTI ID:820945

Muscat, Anthony

OAK-B135 This research work focused on control of the reactive species inside a plasma through measurement and manipulation of the electron energy distribution function (EEDF) and on understanding the surface reaction mechanisms on the substrate exposed to a combination of ion and atom beam sources to simulate a real plasma. A GEC chamber (Gaseous Electronic Conference Reference Cell)8 with a mass spectrometer and a Langmuir probe (LP) system were used for this research. It was found that H2 and N2 additives to an Ar plasma could effectively change the EEDF and the average electron temperature (Te). This finding provides the possibility to selectively control reaction rates in the plasma to control etching selectivity on a surface. This concept was demonstrated in Ar/N2/H2 and Ar/CH4 /H2 systems.

• Research Organization: University of Arizona (US)
• Sponsoring Organization: USDOE Office of Energy Research (ER) (US)
• DOE Contract Number: FG03-00ER54581
• OSTI ID: 820945
• Resource Relation: Other Information: PBD: 28 Jan 2004
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ADDITIVES
ATOMS
CHEMICAL REACTIONS
ELECTRON TEMPERATURE
ELECTRONS
ENERGY SPECTRA
ETCHING
LANGMUIR PROBE
MASS SPECTROMETERS
PLASMA
REACTION KINETICS
SUBSTRATES
LOW TEMPERATURE PLASMAS
ELECTRON ENERGY DISTRIBUTION FUNCTION
PLASMA CONTROL
AR
H2
N2
CH4
INP
MSQ OK TO RELEASE