Skip to main content

Bulk AlN Crystal Growth: Self-Seeding and Seeding on 6H-SiC Substrates

Journal Article · Tue Jan 01 04:00:00 EST 2002 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/S0022-0248(02)01741-4· OSTI ID:815851

Edgar, J H ^[1]

SLAC

No abstract prepared.

Print

Research Organization:: Stanford Linear Accelerator Center, Menlo Park, CA (US); Stanford Synchrotron Radiation Lab. (US)

Sponsoring Organization:: USDOE Office of Science (US)

DOE Contract Number:: AC03-76SF00515

OSTI ID:: 815851

Report Number(s):: SLAC-REPRINT-2002-256

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth

Country of Publication:: United States

Language:: English

Similar Records

Structural Characterization of Bulk AlN Crystals Grown from Self-Seeding and Seeding by SiC Substrates

Journal Article · Sat Dec 31 23:00:00 EST 2005 · Materials Science Forum · OSTI ID:929844

Growth and Surface Morphologies of 6H-SiC Bulk and Epitixial Crystals

Journal Article · Sat Dec 31 23:00:00 EST 2005 · Materials Science Forum · OSTI ID:929841

Growth and characterization of AlN on 6H-SiC substrates

Book · Tue Dec 30 23:00:00 EST 1997 · OSTI ID:581015

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL GROWTH
SILICON CARBIDES
STANFORD SYNCHROTRON RADIATION LABORATORY
SUBSTRATES