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Solid state intermetallic compound growth between copper and high temperature, tin-rich solders. Part I. Experimental analysis

Journal Article · · Journal of Electronic Materials
; ;  [1]
  1. Sandia National Lab., Albuquerque, NM (United States)

An experimental study was performed which examined the solid state growth kinetics of the interfacial intermetallic compound layers formed between copper and the high temperature, tin-rich solders 96.5Sn-3.5Ag (wt.%) and 95Sn-5Sb. These results were compared with baseline data from the 100Sn/copper system. Both the 96.5Sn-3.5Ag and 95Sn-5Sb solders exhibited the individual Cu{sub 3}Sn and Cu{sub 6}Sn{sub 5} layers at the interface; the thickness of the Cu{sub 3}Sn layer being a function of the aging time and temperature. The total thickness of the intermetallic compound layer formed in the 96.5Sn-3.5Ag solder/copper couple showed a mixture of linear and {radical}t dependencies at the lower temperatures of 70, 100, and 135{degree}C, and a t{sup 0.42} dependence at 170 and 205{degree}C. The combined apparent activation energy was 59 kJ/mol; the Arrhenius plot showed a knee between the low and high temperature data. The total layer thickness of the 95Sn-5Sb/copper system exhibited {radical}t dependence at the three lower temperatures and t{sup 0.42} growth kinetics at 170 and 205{degree}C. The combined apparent activation energy was 61 kJ/mol. 7 refs., 7 figs., 3 tabs.

Research Organization:
Sandia National Laboratory
DOE Contract Number:
AC04-94AL85000
OSTI ID:
81364
Report Number(s):
CONF-940204--
Journal Information:
Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 8 Vol. 23; ISSN JECMA5; ISSN 0361-5235
Country of Publication:
United States
Language:
English

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