Atomic hydrogen cleaning of polarized GaAs photocathodes
- SLAC
Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.
- Research Organization:
- Stanford Linear Accelerator Center, Menlo Park, CA (US)
- Sponsoring Organization:
- USDOE Office of Science (US)
- DOE Contract Number:
- AC03-76SF00515
- OSTI ID:
- 812987
- Report Number(s):
- SLAC-PUB-9639
- Country of Publication:
- United States
- Language:
- English
Similar Records
Atomic hydrogen cleaning of GaAS Photocathodes
Effects of atomic hydrogen and deuterium exposure on high polarization GaAs photocathodes
Exposure of GaAs to atomic hydrogen for cleaning prior to NEA photocathode activation
Conference
·
Tue Dec 31 23:00:00 EST 1996
·
OSTI ID:755829
Effects of atomic hydrogen and deuterium exposure on high polarization GaAs photocathodes
Journal Article
·
Wed Nov 30 23:00:00 EST 2005
· Physical Review Special Topics. Accelerators and Beams
·
OSTI ID:876536
Exposure of GaAs to atomic hydrogen for cleaning prior to NEA photocathode activation
Technical Report
·
Wed Dec 30 23:00:00 EST 1998
·
OSTI ID:554147