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Effects of the narrow band gap on the properties of InN

Journal Article · Tue Sep 10 00:00:00 EDT 2002 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.66.201403· OSTI ID:808929

Wu, J ^[1]; Walukiewicz, W; Shan, W; Yu, K M; Ager, III, J W; Haller, E E; Lu, H; Schaff, W J

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: USDOE Director, Office of Science. Office of Basic Energy Sciences. Materials Science and Engineering Division (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 808929

Report Number(s):: LBNL--51471; B& R KC0201030

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 20 Vol. 66

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ENERGY GAP
INDIUM NITRIDES
PHYSICAL PROPERTIES