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U.S. Department of Energy
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Low Noise Double-Sided Silicon Strip Detector for Multiple-Compton Gamma-ray Telescope

Technical Report ·
DOI:https://doi.org/10.2172/808693· OSTI ID:808693
A Semiconductor Multiple-Compton Telescope (SMCT) is being developed to explore the gamma-ray universe in an energy band 0.1-20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of the SMCT is the high energy resolution that is crucial for high angular resolution and high background rejection capability. We have developed prototype modules for a low noise Double-sided Silicon Strip Detector (DSSD) system which is an essential element of the SMCT. The geometry of the DSSD is optimized to achieve the lowest noise possible. A new front-end VLSI device optimized for low noise operation is also developed. We report on the design and test results of the prototype system. We have reached an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at 0 C.
Research Organization:
Stanford Linear Accelerator Center, Menlo Park, CA (US)
Sponsoring Organization:
USDOE Office of Science (US)
DOE Contract Number:
AC03-76SF00515
OSTI ID:
808693
Report Number(s):
SLAC-PUB-9493
Country of Publication:
United States
Language:
English

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