Radiation-Induced Prompt Photocurrents in Microelectronics: Physics
The effects of photocurrents in nuclear weapons induced by proximal nuclear detonations are well known and remain a serious hostile environment threat for the US stockpile. This report describes the final results of an LDRD study of the physical phenomena underlying prompt photocurrents in microelectronic devices and circuits. The goals of this project were to obtain an improved understanding of these phenomena, and to incorporate improved models of photocurrent effects into simulation codes to assist designers in meeting hostile radiation requirements with minimum build and test cycles. We have also developed a new capability on the ion microbeam accelerator in Sandia's Ion Beam Materials Research Laboratory (the Transient Radiation Microscope, or TRM) to supply ionizing radiation in selected micro-regions of a device. The dose rates achieved in this new facility approach those possible with conventional large-scale dose-rate sources at Sandia such as HERMES III and Saturn. It is now possible to test the physics and models in device physics simulators such as Davinci in ways not previously possible. We found that the physical models in Davinci are well suited to calculating prompt photocurrents in microelectronic devices, and that the TRM can reproduce results from conventional large-scale dose-rate sources in devices where the charge-collection depth is less than the range of the ions used in the TRM.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 808617
- Report Number(s):
- SAND2003-0094; TRN: US0302276
- Resource Relation:
- Other Information: PBD: 1 Jan 2003
- Country of Publication:
- United States
- Language:
- English
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