Critical Phenomena of the Disorder Driven Localization-Delocalization Transition

Thesis/Dissertation · Tue Dec 31 04:00:00 EST 2002

DOI:https://doi.org/10.2172/804162· OSTI ID:804162

Ruhlander, Marc ^[1]

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1. Iowa State Univ., Ames, IA (United States)

Metal-to-insulator transitions are generally linked to two phenomena: electron-electron correlations and disorder. Although real systems are usually responding to a mixture of both, they can be classified as undergoing a Mott-transition, if the former process dominates, or an Anderson-transition, if the latter dominates. High-T_c superconductors, e.g., are a candidate for the first class. Materials in which disorder drives the metal-to-insulator transition include doped semiconductors and amorphous materials. After briefly reviewing the previous research on transport in disordered materials and the disorder-induced metal-to-insulator transition, a summary of the model and the methods used in subsequent chapters is given.

• Research Organization: Ames Lab., Ames, IA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 804162
• Report Number(s): IS--T 2326
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
MIXTURES
SUPERCONDUCTORS
TRANSPORT