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Title: Electronic structure of ultrathin Ge layers buried in Si(100)

Journal Article · · Physical Review B: Condensed Matter and Materials Physics

No abstract prepared.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
800669
Report Number(s):
LBNL-50930; LBNL/ALS-43584; TRN: US0202901
Journal Information:
Physical Review B: Condensed Matter and Materials Physics, Vol. 64, Issue 11; Other Information: Journal Publication Date: Sept. 15, 2001; PBD: 1 Aug 2001
Country of Publication:
United States
Language:
English

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