Dislocation processes and deformation twinning in nanocrystalline Al.
Using a recently developed, massively parallel molecular-dynamics (MD) code for the simulation of polycrystal plasticity, we analyze for the case of nanocrystalline Al the complex interplay among various dislocation and grain-boundary processes during low-temperature deformation. A unique aspect of this work, arising from our ability to deform to rather large plastic strains and to consider a rather large grain size, is the observation of deformation under very high grain-boundary and dislocation densities, i.e., in a deformation regime where they compete on an equal footing. We are thus able to identify the intra- and intergranular dislocation and grain-boundary processes responsible for the extensive deformation twinning observed in our simulations. This illustrates the ability of this type of simulations to capture novel atomic-level insights into the underlying deformation mechanisms not presently possible experimentally. smaller grain size, mobile dislocations must be nucleated from other sources, such as the GBs or grain junctions.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 793905
- Report Number(s):
- ANL/MSD/CP-106308
- Country of Publication:
- United States
- Language:
- English
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