Imaging of the crystal structure of silicon nitride at 0.8 Angstrom resolution
Journal Article
·
· Acta Materialia
OSTI ID:792940
- LBNL Library
High-resolution transmission electron microscopy is utilized to examine the crystal structure of a silicon nitride ceramic using focus variation methods to achieve sub-angstrom resolution at the absolute theoretical information limit of the transmission electron microscope.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 792940
- Report Number(s):
- LBNL--48680
- Journal Information:
- Acta Materialia, Journal Name: Acta Materialia Journal Issue: 3 Vol. 50; ISSN 1359-6454; ISSN ACMAFD
- Country of Publication:
- United States
- Language:
- English
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