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The Effect of dead-timeless silicon strip readout at CDF II

Conference ·
OSTI ID:792524
The Run IIa CDF Silicon Upgrade has recently finished installation. The detector uses revision D of the SVX3 readout IC. This final revision incorporated new features in order to improve the potential of dead-timeless operation. This paper describes measurements of dead-timeless effects on silicon strip readout on the test bench. This paper also describes tests of the dynamic pedestal subtraction circuitry, which is shown to improve greatly the dead-timeless performance of the silicon systems.
Research Organization:
Fermi National Accelerator Lab., Batavia, IL (US)
Sponsoring Organization:
USDOE Office of Energy Research (ER) (US)
DOE Contract Number:
AC02-76CH03000
OSTI ID:
792524
Report Number(s):
FERMILAB-Conf-02/026-E; ISSN 0148-7191
Country of Publication:
United States
Language:
English

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