Uniform-Heigh Island Growth of Pb on Si(111)-Pb (square root of 3 X square root of 3) at Low Temperatures
Journal Article
·
· Physical Review B
No abstract prepared.
- Research Organization:
- Ames Laboratory (AMES), Ames, IA
- Sponsoring Organization:
- USDOE Office of Science
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 791925
- Report Number(s):
- IS-J 6661
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 15 Vol. 64
- Country of Publication:
- United States
- Language:
- English
Similar Records
Uniform-height island growth of Pb on Si(111)-Pb({radical}3 x {radical}3) at low temperatures
Atomic Models, Domain-Wall Arrangement, and Electronic Structure of the Dense Pb/Si(111)-Square root of 3 X Square root of 3 Phase
Regular Nanocluster Networks on Pb/Si(111)-Pbsquare root3 X square root3 at Low Temperatures
Journal Article
·
Mon Oct 15 00:00:00 EDT 2001
· Physical Review B
·
OSTI ID:40277704
Atomic Models, Domain-Wall Arrangement, and Electronic Structure of the Dense Pb/Si(111)-Square root of 3 X Square root of 3 Phase
Journal Article
·
Wed Oct 30 23:00:00 EST 2002
· Physical Review B
·
OSTI ID:806613
Regular Nanocluster Networks on Pb/Si(111)-Pbsquare root3 X square root3 at Low Temperatures
Journal Article
·
Fri May 10 00:00:00 EDT 2002
· Physical Review B
·
OSTI ID:795620